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We present Gaia, a monolithic array of 96 high-purity germanium pixel detectors integrated with a custom low-noise application-specific integrated circuit (ASIC) and a field-programmable gate array (FPGA)-based data acquisition system. The sensor operates at ∼100 K using a commercial closed-cycle cryocooler, with the in-vacuum electronics thermally isolated from the cold finger to ensure thermal stability. The system demonstrates an average energy resolution of 711 eV at 122 keV, measured using a ⁵⁷Co source, and 253 eV at 5.89 keV, measured with ⁵⁵Fe across all channels. The readout architecture incorporates a high-performance FPGA paired with a dual-core ARM processor, forming amore » complete embedded Linux-based computing platform. Communication between the processor and FPGA is handled via memory-mapped I/O, and data are streamed over high-speed gigabit Ethernet. A full-scale 384-pixel Gaia detector, based on this 96-element module, is currently under fabrication.« less

Germanium is a high-Z sensor material with excellent energy resolution and attractive properties for high-energy photon detection. Despite its advantages, the need for cryogenic operation and challenges in the fabrication of pixelated high-purity germanium have hindered the development of segmented detectors. We report on the fabrication and performance of a germanium imaging detector with 150 μm pixel pitch hybridized to the MM-PAD ASIC. The detector was capable of high-resolution radiographic imaging and has a fast temporal response. Additionally, we describe the detector's upper operating temperature limits using both the MM-PAD and MARS ASICs, achieving stable operation up to 130 Kmore » and 190 K, respectively.« less

Development of a robust, thin, hole-blocking (n+) contact on high purity germanium (HPGe) has been the main challenge in the development of Ge-based radiation sensors. Yttrium has been reported to be a viable hole-blocking contact on HPGe, and detectors with low leakage have been fabricated. Niobium has also been considered as a potential hole-blocking contact due to its low work function. Here, we investigate interface chemistry and the Schottky barrier height of Y and Nb, as well as electron-blocking contacts Au and Pt, on Ge(100) surfaces using hard x-ray photoelectron spectroscopy. We find a barrier height of 1.05 ± 0.10 eVmore » for Y/HPGe, confirming the formation of a hole-blocking barrier. For Nb/HPGe, the barrier height of 0.13 ± 0.10 eV demonstrates that the interface is not hole-blocking. The Schottky barrier of Au and Pt was found to be 0.45 ± 0.10 and 0.51 ± 0.10 eV, respectively.« less